Stability of Ionic Liquid-Gated Metal Oxides and Transistors

Author

Bubel, Simon ; Meyer, Sebastian ; Chabinyc, Michael L.

Author_Institution

Mater. Res. Lab., Univ. of California at Santa Barbara, Santa Barbara, CA, USA

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1561

Lastpage

1566

Abstract

Ionic liquids (ILs) and their gels are considered for low-voltage and flexible devices due to their ease of processing, freedom in device design, and the realization of high electrostatic fields at low bias voltages. If IL-gated devices are operated at electrochemically stable biases of their individual compounds, they are believed to be reliable. However, small instabilities at interfaces to amorphous oxide semiconductors can lead to secondary instabilities and even the decomposition of gold electrodes, in this paper shown for the case of cyano containing anions.

Keywords

electrochemical electrodes; flexible electronics; thin film transistors; amorphous oxide semiconductor; cyano containing anion; electrochemically stable bias; flexible device; gold electrode decomposition; high electrostatic field; ionic liquid-gated metal oxide; low voltage device; secondary instability; Capacitance; Electrodes; Gold; Liquids; Logic gates; Transistors; Zinc oxide; Degradation; electrolyte; electronic double layer; gold leaching; imidazolium; ion gel; ionic liquid (IL); stains; tetracyanoborate (TCB); turbidity; zinc oxide; zinc oxide.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2308141

Filename

6774923