Title :
Stability of Ionic Liquid-Gated Metal Oxides and Transistors
Author :
Bubel, Simon ; Meyer, Sebastian ; Chabinyc, Michael L.
Author_Institution :
Mater. Res. Lab., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
Abstract :
Ionic liquids (ILs) and their gels are considered for low-voltage and flexible devices due to their ease of processing, freedom in device design, and the realization of high electrostatic fields at low bias voltages. If IL-gated devices are operated at electrochemically stable biases of their individual compounds, they are believed to be reliable. However, small instabilities at interfaces to amorphous oxide semiconductors can lead to secondary instabilities and even the decomposition of gold electrodes, in this paper shown for the case of cyano containing anions.
Keywords :
electrochemical electrodes; flexible electronics; thin film transistors; amorphous oxide semiconductor; cyano containing anion; electrochemically stable bias; flexible device; gold electrode decomposition; high electrostatic field; ionic liquid-gated metal oxide; low voltage device; secondary instability; Capacitance; Electrodes; Gold; Liquids; Logic gates; Transistors; Zinc oxide; Degradation; electrolyte; electronic double layer; gold leaching; imidazolium; ion gel; ionic liquid (IL); stains; tetracyanoborate (TCB); turbidity; zinc oxide; zinc oxide.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2308141
