DocumentCode :
40649
Title :
Analytical relationship between subthreshold swing of thermionic and tunnelling currents
Author :
Hiblot, Gaspard ; Rafhay, Quentin ; Boeuf, F. ; Ghibaudo, Gerard
Author_Institution :
STMicroelectron., Crolles, France
Volume :
50
Issue :
23
fYear :
2014
fDate :
11 6 2014
Firstpage :
1745
Lastpage :
1747
Abstract :
An analytical relationship between the subthreshold swing of the thermionic current and the tunnelling current is derived for double-gate metal-oxide semiconductor field-effect transistors (MOSFETs), based on the Wentzel-Kramers-Brillouin approximation. This formula allows predicting the behaviour of an ultimately scaled MOSFET in the subthreshold regime, as well as the performance of III-V devices.
Keywords :
MOSFET; tunnelling; III-V devices; Wentzel-Kramers-Brillouin approximation; double-gate MOSFETs; metal-oxide semiconductor field-effect transistors; subthreshold swing; thermionic current; tunnelling current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3206
Filename :
6955168
Link To Document :
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