DocumentCode :
406664
Title :
What is wrong with line-type modulators?
Author :
Whitham, Kenneth
Author_Institution :
Siemens Med. Solutions, Concord, CA, USA
Volume :
1
fYear :
2003
fDate :
2-6 Nov. 2003
Firstpage :
93
Abstract :
A number of architectures for modulators have been generated since the line-type modulator was developed. Each design approach offers advantages and disadvantages for a given application. Recent designed architectures include IGBT-switched capacitor banks, IGBT-switched induction adders, and IGBT-switched fractional turn transformers. This paper takes a brief look at these three modulator approaches, briefly describes them, considers their relative advantages and disadvantages, compares them with an SCR switched PFN, and attempts to answer the question: What is wrong with line-type modulators?.
Keywords :
insulated gate bipolar transistors; modulators; power semiconductor switches; pulse transformers; pulsed power switches; switched capacitor networks; IGBT switched capacitor banks; IGBT switched fractional turn transformers; IGBT switched induction adders; SCR switched pulse forming network; insulated gate bipolar transistors; line type modulators; pulsed power switches; silicon controlled rectifier; Capacitors; Circuits; Costs; Insulated gate bipolar transistors; Protection; Pulse modulation; Pulse shaping methods; Pulse transformers; Switches; Transformer cores;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics Society, 2003. IECON '03. The 29th Annual Conference of the IEEE
Print_ISBN :
0-7803-7906-3
Type :
conf
DOI :
10.1109/IECON.2003.1279961
Filename :
1279961
Link To Document :
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