Title :
Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors
Author :
Trevisoli, Renan ; Trevisoli Doria, Rodrigo ; de Souza, Michelly ; Pavanello, Marcelo Antonio
Author_Institution :
Centro Univ. da FEI, São Bernardo do Campo, Brazil
Abstract :
The aim of this paper is to analyze the substrate bias influence on the operation of junctionless nanowire transistors based on 3-D simulated and experimental results, accomplished by modeled data. The threshold voltage, the maximum transconductance, the subthreshold slope, the drain-induced barrier lowering (DIBL), and the ION/IOFF ratio are the key parameters under analysis. It has been shown that the negative back bias can reduce the short-channel effects occurrence, improving the ION/IOFF ratio and DIBL.
Keywords :
field effect transistors; nanowires; semiconductor device models; DIBL; drain-induced barrier lowering; junctionless nanowire transistors; maximum transconductance; negative back bias; short channel effects; substrate bias; subthreshold slope; threshold voltage; Doping; Electric potential; Logic gates; Silicon; Substrates; Threshold voltage; Voltage measurement; Junctionless transistors; maximum transconductance; substrate bias; subthreshold slope; threshold voltage; threshold voltage.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2309334
