A new parameter extraction approach for the circuit-based models of FETs

A new parameter extraction approach for identification of FET in the class of circuit-based models is proposed. The computational (and simulation) part of this procedure use analytical smoothing of the experimental data (measured S-parameters). Except smoothing and analytical expressions for calculation of parameters it gives the solution of poorly conditional problem of adequate use of this class of circuit-based models. The elements of FET model are extracted by Eagleware Genesys simulator with the developed optimization procedure.