Title :
Mathematical treatment for HS MOSFET turn off
Abstract :
The race to produce the fastest MOSFET is heating up right now between all the top semiconductor companies around the world. MOSFETs with gate to drain charge, Qgd, of 2.2nC are available now in engineering samples and talk of Qgd of less than 2nC early next year was announced. These figures should theoretically translate into doubling the switching speeds of the commercially available MOSFETs leading to higher efficiency and higher switching frequencies.
Keywords :
electric potential; field effect transistor switches; inductance; mathematical analysis; HS MOSFET; bipolar gate drive; gate threshold voltage; gate to drain charge; gate-source voltage; metal-oxide-semiconductor field effect transistors; parasitic source inductance; switching speeds; Equations; Inductance; MOSFET circuits; Packaging; Switches; Switching loss; Testing; Threshold voltage; Transconductance; Writing;
Conference_Titel :
Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on
Print_ISBN :
0-7803-7885-7
DOI :
10.1109/PEDS.2003.1282683
