DocumentCode :
4074
Title :
A Robust Augmented Complexity-Reduced Generalized Memory Polynomial for Wideband RF Power Amplifiers
Author :
You-Jiang Liu ; Jie Zhou ; Wenhua Chen ; Bang-Hua Zhou
Author_Institution :
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Volume :
61
Issue :
5
fYear :
2014
fDate :
May-14
Firstpage :
2389
Lastpage :
2401
Abstract :
This paper proposes a robust model for the accurate behavioral modeling and digital predistortion (DPD) of wideband radio-frequency power amplifiers (PAs). It is constructed using a complexity-reduced generalized memory polynomial (MP) (GMP) (CR-GMP) connected with a nonlinear memory effect (NME) subblock in parallel. The CR-GMP is a complexity-reduced but accuracy-degraded version of the conventional GMP, and its performance is augmented by the extra NME subblock. Hence, the proposed model is termed as augmented CR-GMP (ACR-GMP). The resultant ACR-GMP model can achieve comparable performance as the GMP model, but with much fewer coefficients and lower complexity. Its performance is experimentally assessed both in forward modeling and DPD linearization. Comparisons are conducted between the ACR-GMP model and some state-of-the-art models, such as the MP, the PLUME, and the GMP. Experimental results have been given for a 1.9-GHz 35-W peak-power GaN Class-AB PA driven by two signal scenarios: a 15-MHz bandwidth long-term-evolution signal and a 20-MHz bandwidth wideband-code-division-multiple-access 1001 signal (with the middle two carriers OFF). All the results show that the ACR-GMP model outperforms both the MP and the PLUME models in terms of performances and the GMP model in terms of complexity (at comparable performances).
Keywords :
III-V semiconductors; Long Term Evolution; UHF power amplifiers; code division multiple access; gallium compounds; semiconductor device models; wide band gap semiconductors; wideband amplifiers; ACR-GMP model; GaN; PLUME model; bandwidth 15 MHz; bandwidth 20 MHz; digital predistortion; frequency 1.9 GHz; long-term-evolution signal; nonlinear memory effect; power 35 W; robust augmented complexity-reduced generalized memory polynomial; wideband RF power amplifiers; wideband radio-frequency power amplifiers; wideband-code-division-multiple-access 1001 signal; Behavioral modeling; MP; digital predistortion (DPD); generalized memory polynomial (MP) (GMP); memory effect; power amplifiers (PAs);
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/TIE.2013.2270217
Filename :
6544668
Link To Document :
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