DocumentCode
407551
Title
Sub-10-nm electronics
Author
Likharev, Konstantin K.
Author_Institution
Stony Brook Univ., NY, USA
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
19
Abstract
This paper reviews the future electron devices (SET,MOSFET), circuits fabrication and CMOS technology.
Keywords
CMOS integrated circuits; MOSFET; nanoelectronics; 10 nm; CMOS technology; MOSFET; circuits fabrication; electron devices; nanoelectronics; nanofabrication; CMOS technology; Circuits; Costs; Electron devices; FETs; Fabrication; Impurities; Nanoscale devices; Neuromorphics; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283474
Filename
1283474
Link To Document