DocumentCode :
407551
Title :
Sub-10-nm electronics
Author :
Likharev, Konstantin K.
Author_Institution :
Stony Brook Univ., NY, USA
fYear :
2003
fDate :
16-18 Dec. 2003
Firstpage :
19
Abstract :
This paper reviews the future electron devices (SET,MOSFET), circuits fabrication and CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; nanoelectronics; 10 nm; CMOS technology; MOSFET; circuits fabrication; electron devices; nanoelectronics; nanofabrication; CMOS technology; Circuits; Costs; Electron devices; FETs; Fabrication; Impurities; Nanoscale devices; Neuromorphics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283474
Filename :
1283474
Link To Document :
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