DocumentCode
407553
Title
Trends in high-density flash memory technologies
Author
Kimura, Katsutaka ; Kobayashi, Takashi
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fYear
2003
fDate
16-18 Dec. 2003
Firstpage
45
Lastpage
50
Abstract
High-density flash memories have been developed as bridge media connecting home and office to mobile equipment. To meet the requirement of bit cost reduction and high-speed multilevel programming, multi-level (assist gate-AND) AG-AND type flash memory with small effective cell size and !0 MB/s programming have been developed.
Keywords
flash memories; logic gates; multiprogramming; high density flash memory; high-speed multilevel programming; mobile equipment; multilevel assist gate-AND type flash memory; Bridges; Channel hot electron injection; Costs; Flash memory; Joining processes; Temperature dependence; Temperature distribution; Temperature sensors; Throughput; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283480
Filename
1283480
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