Title :
Novel InGaP/GaAsSb/GaAs DHBTs
Author :
Cheung, C.C. ; Yan, B.P. ; Hsu, C.C. ; Yang, E.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., China
Abstract :
A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. Novel device structure is designed. A fully strained pseudomorphic GaAsSb with 8.0% Sb composition is used as the base layer, while an InGaP layer as the emitter which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 22.6 has been obtained from the InGaP/GaAsSb/GaAs DHBT. Typical turn-on voltage of the device is 0.973 V which is 0.116V lower than that of traditional InGaP/GaAs HBT. Moreover, the current transport mechanism of the InGaP/GaAsSb/GaAs DHBTs is investigated. These results show that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs.
Keywords :
III-V semiconductors; MOCVD coatings; arsenic compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor thin films; 0.973 V; InGaP layer; InGaP-GaAsSb-GaAs; InGaP/GaAsSb/GaAs DHBT; double heterojunction bipolar transistor; misfit dislocations; valence band; Atomic force microscopy; Conducting materials; Double heterojunction bipolar transistors; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Optical devices; Power dissipation; Surface morphology; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283545
