Title :
Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP
Author :
Yang, Wen-Chih ; Chen, Chu-Feng ; Chang, Kow-Ming
Author_Institution :
Dept. of Electron. Eng., Nat.Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N2/O2=5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.
Keywords :
MOS capacitors; elemental semiconductors; rapid thermal processing; semiconductor device reliability; silicon; 1 nm; RTP; Si; electrical properties; field stressing; gate leakage current; interface properties; interface trap; reliability; ultrathin oxynitride films; ultrathin oxynitride gate dielectric materials; CMOS technology; Capacitance-voltage characteristics; Current measurement; Dielectric films; Dielectric measurements; Dielectric substrates; Electrons; MOS capacitors; Nitrogen; Stress measurement;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283547
