• DocumentCode
    407563
  • Title

    Electrical and reliability characteristics of 1 nm ultrathin oxynitride gate dielectric prepared by RTP

  • Author

    Yang, Wen-Chih ; Chen, Chu-Feng ; Chang, Kow-Ming

  • Author_Institution
    Dept. of Electron. Eng., Nat.Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2003
  • fDate
    16-18 Dec. 2003
  • Firstpage
    349
  • Lastpage
    352
  • Abstract
    Ultra low leakage and highly reliable 1 nm gate oxynitride films were successfully developed. Ultrathin oxynitride films were prepared by RTP in N2/O2=5/1 (slm) optimum mixed gas ambient. These films show excellent interface properties, significantly low gate leakage current, and superior enhanced reliability. Moreover, interface trap generation under higher field stressing was also investigated.
  • Keywords
    MOS capacitors; elemental semiconductors; rapid thermal processing; semiconductor device reliability; silicon; 1 nm; RTP; Si; electrical properties; field stressing; gate leakage current; interface properties; interface trap; reliability; ultrathin oxynitride films; ultrathin oxynitride gate dielectric materials; CMOS technology; Capacitance-voltage characteristics; Current measurement; Dielectric films; Dielectric measurements; Dielectric substrates; Electrons; MOS capacitors; Nitrogen; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
  • Print_ISBN
    0-7803-7749-4
  • Type

    conf

  • DOI
    10.1109/EDSSC.2003.1283547
  • Filename
    1283547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=407563