Title :
To a problem on direct tunneling charge carriers through the ultrathin gate dielectric in MOSFETs
Author :
Krasnikov, G.Ya. ; Zaitsev, A.N. ; Matyushkin, V.I.
Author_Institution :
Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia
Abstract :
The problem on validity of leakage currents calculation is considered on the basis of a value of a barrier transmittivity obtained within the framework of WKB-approximation. In WKB frameworks more strict expressions linking boundary conditions on wave functions and transmittivity of a barrier are obtained. The possibility of resonant tunneling in a MOS-structure is indicated, that explains nonmonotone dependence of the tunnel current density on gate voltage (Vg<0.5B).
Keywords :
MIS structures; MOSFET; WKB calculations; current density; dielectric materials; leakage currents; resonant tunnelling; semiconductor device models; wave functions; MOS structure; MOSFET; WKB-approximation; barrier transmittivity; boundary conditions; leakage current; resonant tunneling; tunnel current density; tunneling charge carriers; ultrathin gate dielectrics; wave functions; Boundary conditions; Charge carriers; Current density; Dielectrics; Joining processes; Leakage current; MOSFETs; Resonant tunneling devices; Voltage; Wave functions;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
DOI :
10.1109/EDSSC.2003.1283565
