To a problem on direct tunneling charge carriers through the ultrathin gate dielectric in MOSFETs

Author

Krasnikov, G.Ya. ; Zaitsev, A.N. ; Matyushkin, V.I.

Author_Institution

Res. & Dev. Inst. for Molecular Electron., MICRON, Moscow, Russia

fYear

2003

fDate

16-18 Dec. 2003

Firstpage

427

Lastpage

430

Abstract

The problem on validity of leakage currents calculation is considered on the basis of a value of a barrier transmittivity obtained within the framework of WKB-approximation. In WKB frameworks more strict expressions linking boundary conditions on wave functions and transmittivity of a barrier are obtained. The possibility of resonant tunneling in a MOS-structure is indicated, that explains nonmonotone dependence of the tunnel current density on gate voltage (V_g<0.5B).

Keywords

MIS structures; MOSFET; WKB calculations; current density; dielectric materials; leakage currents; resonant tunnelling; semiconductor device models; wave functions; MOS structure; MOSFET; WKB-approximation; barrier transmittivity; boundary conditions; leakage current; resonant tunneling; tunnel current density; tunneling charge carriers; ultrathin gate dielectrics; wave functions; Boundary conditions; Charge carriers; Current density; Dielectrics; Joining processes; Leakage current; MOSFETs; Resonant tunneling devices; Voltage; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2003 IEEE Conference on

Print_ISBN

0-7803-7749-4

Type

conf

DOI

10.1109/EDSSC.2003.1283565

Filename

1283565