Thermal infrared detection using linear arrays of poly SiGe uncooled microbolometers

Author

De Moor, P. ; Creten, Y. ; Goessens, C. ; Grietens, B. ; Leonov, V. ; Vermeiren, J. ; Van Hoof, C.

Author_Institution

IMEC, Leuven, Belgium

fYear

2003

fDate

9-11 Dec. 2003

Firstpage

140

Lastpage

142

Abstract

In this paper, we discuss the SiGe technology for uncooled microbolometer arrays of small format, ie 200×1 and 14×14, is transferred from IMEC to XenICs allowing of the poly-SiGe arrays for application in non-contact temperature measurements, infrared spectroscopy, technological process monitoring, quality control, etc. The arrays demonstrate an exceptional uniformity, about 100% pixel yield, 100% operability, and a NETD of about 100 mK at a readout level. These advantages combined with a possibility of hermetic zero-level micropacking make the SiGe technology a proper one for the low-cost production of infrared arrays.

Keywords

Ge-Si alloys; bolometers; infrared detectors; integrated circuit packaging; semiconductor devices; semiconductor materials; 100 mK; NETD; SiGe; hermetic zero-level micropacking; infrared arrays; noise equivalent temperature differential; pixel; poly SiGe uncooled microbolometer linear arrays; thermal infrared detection; Bolometers; Etching; Filling; Germanium silicon alloys; Infrared detectors; Manufacturing processes; Production; Silicon germanium; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on

Print_ISBN

977-05-2010-1

Type

conf

DOI

10.1109/ICM.2003.1287741

Filename

1287741