Title :
On the low-frequency noise and hot-carrier reliability in 0.13 μm Partially depleted SOI MOSFETs
Author :
Dieudonné, François ; Jomaah, Jalal ; Balestra, Francis
Author_Institution :
IMEP, ENSERG, Grenoble, France
Abstract :
Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 μm CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.
Keywords :
CMOS integrated circuits; MOSFET; elemental semiconductors; hot carriers; integrated circuit reliability; low-power electronics; semiconductor device noise; silicon-on-insulator; 0.13 micron; CMOS technology; Si; degradation mechanism; hot carrier reliability; low frequency noise; low power radiofrequency application; partially depleted SOI MOSFET; CMOS technology; Degradation; Frequency measurement; Hot carriers; Low-frequency noise; MOSFET circuits; Noise level; Noise measurement; Transconductance; Tunneling;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287788
