On the low-frequency noise and hot-carrier reliability in 0.13 μm Partially depleted SOI MOSFETs

Author

Dieudonné, François ; Jomaah, Jalal ; Balestra, Francis

Author_Institution

IMEP, ENSERG, Grenoble, France

fYear

2003

fDate

9-11 Dec. 2003

Firstpage

248

Lastpage

251

Abstract

Partially depleted (PD) SOI devices are now of a major interest in becoming one of the more sought devices for the integration of high-performance low-power radiofrequency applications. Along with this strong interest for PD to jump widely into the application era, some basic but crucial points still need to be thoroughly investigated for the 0.13 μm CMOS technology node: the low frequency noise (LFN) and the control of novel excess noise sources as well as the hot-carrier (HC) reliability and new degradation mechanisms.

Keywords

CMOS integrated circuits; MOSFET; elemental semiconductors; hot carriers; integrated circuit reliability; low-power electronics; semiconductor device noise; silicon-on-insulator; 0.13 micron; CMOS technology; Si; degradation mechanism; hot carrier reliability; low frequency noise; low power radiofrequency application; partially depleted SOI MOSFET; CMOS technology; Degradation; Frequency measurement; Hot carriers; Low-frequency noise; MOSFET circuits; Noise level; Noise measurement; Transconductance; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on

Print_ISBN

977-05-2010-1

Type

conf

DOI

10.1109/ICM.2003.1287788

Filename

1287788