Theoretical investigation of single- and dual-gate metal insulator tunnel transistors

In this paper, we investigated a new class of nanometer scale transistors that use the field generated by an applied gate bias to modulate the transmission probability through a tunnel barrier between drain and source. The characteristics of such transistors were studied using a computer simulation. A 2-D Poisson´s equation solver was implemented to calculate the potential distribution using the finite element method. Then, the current was calculated using the transmission coefficient by considering the electron energy distribution. Two forms of the transistors were studied: single-gate MITT and dual-gate MITT. For each form, the key parameters affecting the device operation were studied.