New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

This paper proposes a new extraction method of radiation-induced oxide-trap density (ΔN_ot), called OTCP (Oxide-Trap based on Charge-Pumping). In this method, we use a High Frequency (HF) standard CP measurement. We avoid the border-trap effect in CP current (I_cp) measurements. Hence, I_cp is only due to the interface-trap contribution. We demonstrate that ΔN_ot is only dependent on ΔV_th (threshold voltage shift) and ΔI_cpm (augmentation of maximum CP current). We also show that ΔV_th can be obtained from lateral shift of CP Elliot curves and ΔI_cpm from vertical shift.