New oxide-trap extraction method for irradiated MOSFET devices at high frequencies

Author

Djezzar, Boualem ; Oussalah, Slimane ; Smatti, Abderrazak

Author_Institution

Microelectron. Lab., Algiers, Algeria

fYear

2003

fDate

9-11 Dec. 2003

Firstpage

383

Lastpage

386

Abstract

This paper proposes a new extraction method of radiation-induced oxide-trap density (ΔN_ot), called OTCP (Oxide-Trap based on Charge-Pumping). In this method, we use a High Frequency (HF) standard CP measurement. We avoid the border-trap effect in CP current (I_cp) measurements. Hence, I_cp is only due to the interface-trap contribution. We demonstrate that ΔN_ot is only dependent on ΔV_th (threshold voltage shift) and ΔI_cpm (augmentation of maximum CP current). We also show that ΔV_th can be obtained from lateral shift of CP Elliot curves and ΔI_cpm from vertical shift.

Keywords

MOSFET; elemental semiconductors; radiation effects; semiconductor device models; silicon; silicon compounds; Si-SiO₂; current measurements; extraction method; interface-trap contribution; irradiated MOSFET devices; radiation-induced oxide-trap density; Charge pumps; Circuit testing; Degradation; Frequency measurement; Integrated circuit testing; Laboratories; MOSFET circuits; Microelectronics; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on

Print_ISBN

977-05-2010-1

Type

conf

DOI

10.1109/ICM.2003.1287843

Filename

1287843