Extended Oxide-Trap extraction method to low frequencies for irradiated MOS transistors

We present an extraction of the OTCP (Oxide-Trap based on Charge-Pumping method from high frequencies (HF) to low frequencies (LF). Thus using the LF-OTCP method, the interface-trap and border-trap are simultaneously involved in charge pumping (CP) current (I_cp) measurements. We have found that radiation-induced oxide-trap (ΔN_ot) is only dependent on ΔV_th (threshold voltage shift). ΔI_cpm,h (augmentation of maximum CP current at high frequencies), and ΔI_cpm,l (augmentation of maximum CP current at low frequencies). Where δI_cpm,l and ΔI_cpm,h can be easily obtained from vertical shift of charge pumping curve at low and high frequencies respectively, and ΔV_th from lateral one.