DocumentCode
409519
Title
High-Q thin-film silicon resonators processed at temperatures below 110°C on glass and plastic substrates
Author
Gaspar, J. ; Chu, V. ; Conde, J.P.
Author_Institution
INESC Microsistemas e Nanotecnologias, Lisbon, Portugal
fYear
2004
fDate
2004
Firstpage
633
Lastpage
636
Abstract
This work reports on the fabrication and characterization of thin-film silicon micromachined bridge resonators processed at temperatures below 110°C on glass and plastic substrates. The microelectromechanical structures are electrostatically actuated and the resulting deflection is optically monitored as a function of the geometrical dimensions and the measurement pressure. Resonance frequencies in the MHz range are detected. Quality factors up to 5000 are observed in vacuum for the microresonators on glass substrates, while the quality factors for similar bridges on plastic substrates are more than one order of magnitude lower. The elementary energy dissipation processes in hydrogenated amorphous silicon based resonators are discussed.
Keywords
Q-factor; amorphous semiconductors; electrostatic actuators; elemental semiconductors; micromechanical resonators; semiconductor thin films; silicon; 110 degC; Si; elementary energy dissipation; glass substrates; high-Q thin film silicon resonators; hydrogenated amorphous silicon; microelectromechanical structures; plastic substrates; quality factor; resonance frequencies; thin film silicon micromachined bridge resonators; Bridges; Glass; Optical device fabrication; Optical resonators; Plastic films; Q factor; Semiconductor thin films; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN
0-7803-8265-X
Type
conf
DOI
10.1109/MEMS.2004.1290664
Filename
1290664
Link To Document