Low phase noise CMOS distributed oscillators using MEMS low loss transmission lines

Author

Park, Eun-Chul ; Song, Taek-Sang ; Baek, Sang-Hyun ; Yoon, Euisik

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

fYear

2004

fDate

2004

Firstpage

645

Lastpage

648

Abstract

For the first time, low noise distributed oscillators for millimeter wave signal generation have been realized by using fully IC compatible, monolithically-integrable 3-D RF MEMS transmission lines. The active core circuits of the distributed oscillators have been fabricated using 0.18 μm CMOS processes. On the top of this CMOS circuits, low-loss MEMS transmission lines have been monolithically integrated suspending by 25 μm. Phase noise of the fabricated MEMS distributed oscillators has been measured as -125.7 dBc/Hz at 1 MHz offset frequency from oscillation frequency of 13 GHz. This is the lowest phase noise ever reported on distributed oscillators implemented in CMOS technology.

Keywords

CMOS integrated circuits; MIMIC; high-frequency transmission lines; integrated circuit noise; micromechanical devices; millimetre wave oscillators; noise generators; phase noise; semiconductor device noise; 0.18 micron; 1 MHz; 13 GHz; 25 micron; CMOS circuits; CMOS technology; MEMS distributed oscillators; MEMS loss transmission lines; low phase noise CMOS distributed oscillators; microelectromechanical system; millimeter wave signal generation; offset frequency; oscillation frequency; CMOS technology; Distributed parameter circuits; Frequency; Integrated circuit noise; Micromechanical devices; Noise generators; Oscillators; Phase noise; Propagation losses; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290667

Filename

1290667