K band two λ/2 resonators micromachined filter design

Author

Li, Xiuping ; Gao, Jianjun ; Law, Choi Look ; Aditya, Shed

Author_Institution

Positioning & Wireless Technol. Center, Nanyang Technol. Univ., Singapore

Volume

2

fYear

2003

fDate

15-18 Dec. 2003

Firstpage

1106

Abstract

This paper describes a micromachined 2-layer structure bandpass filter design at K band. This two-layer structure with ground plane on the upper wafer and solid substrate supporting the circuit is much stronger and much easier to be fabricated on GaAs substrate compared with 3-layer membrane structure. The microwave performances of the filter show less than 1dB insertion loss and good enough stop band rejection for RFID application.

Keywords

arsenic compounds; band-pass filters; band-stop filters; dielectric resonator filters; gallium compounds; micromachining; micromechanical devices; microwave filters; millimetre wave filters; resonators; substrates; waveguide filters; 18 to 27 GHz; GaAs; GaAs substrate; K band; RFID application; bandpass filter design; ground plane; insertion loss; micromachined two-layer structure; microwave performance; resonator; solid substrate; stop band rejection; wafer substrate; Band pass filters; Bandwidth; Biomembranes; Capacitance; Dielectric losses; Dielectric substrates; Equivalent circuits; Fabrication; Gallium arsenide; Resonator filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Information, Communications and Signal Processing, 2003 and Fourth Pacific Rim Conference on Multimedia. Proceedings of the 2003 Joint Conference of the Fourth International Conference on

Print_ISBN

0-7803-8185-8

Type

conf

DOI

10.1109/ICICS.2003.1292631

Filename

1292631