DocumentCode
410132
Title
Development of new configurations of BAW composite filter structures
Author
Mansfeld, G.D. ; Alekseev, S.G. ; Kotelyanskii, I.M. ; Prokhorova, I.G.
Author_Institution
Inst. of Radioengineering & Electron., Russian Acad. of Sci., Moscow, Russia
Volume
2
fYear
2003
fDate
5-8 Oct. 2003
Firstpage
1487
Abstract
A simple matrix approach to the calculation of multilayered BAW resonators and filters has been developed. Expressions for matrix elements connecting electrical and mechanical characteristics of piezoelectric layers have been obtained. A special case of piezoelectric semiconductor layer has been considered. The possibility of electronic gain in a filter structure has been shown.
Keywords
bulk acoustic wave devices; filters; piezoelectric semiconductors; BAW composite filter structures; electronic gain; filter structure; matrix elements; multilayered BAW filters; multilayered BAW resonators; piezoelectric layers; piezoelectric semiconductor layer; simple matrix; Electrodes; Joining processes; Mirrors; Nonhomogeneous media; Protection; Resonator filters; Stress; Substrates; Voltage; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN
0-7803-7922-5
Type
conf
DOI
10.1109/ULTSYM.2003.1293187
Filename
1293187
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