Title :
Development of new configurations of BAW composite filter structures
Author :
Mansfeld, G.D. ; Alekseev, S.G. ; Kotelyanskii, I.M. ; Prokhorova, I.G.
Author_Institution :
Inst. of Radioengineering & Electron., Russian Acad. of Sci., Moscow, Russia
Abstract :
A simple matrix approach to the calculation of multilayered BAW resonators and filters has been developed. Expressions for matrix elements connecting electrical and mechanical characteristics of piezoelectric layers have been obtained. A special case of piezoelectric semiconductor layer has been considered. The possibility of electronic gain in a filter structure has been shown.
Keywords :
bulk acoustic wave devices; filters; piezoelectric semiconductors; BAW composite filter structures; electronic gain; filter structure; matrix elements; multilayered BAW filters; multilayered BAW resonators; piezoelectric layers; piezoelectric semiconductor layer; simple matrix; Electrodes; Joining processes; Mirrors; Nonhomogeneous media; Protection; Resonator filters; Stress; Substrates; Voltage; Zinc oxide;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293187
