Thin film bulk acoustic wave devices for applications at 5.2 GHz

Author

Fattinger, G.G. ; Kaitila, J. ; Aigner, R. ; Nessler, W.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

1

fYear

2003

fDate

5-8 Oct. 2003

Firstpage

174

Abstract

Infineon Technologies has started volume manufacturing of bulk acoustic wave (BAW) filters for GSM mobile handset applications in mid 2002. In this paper the feasibility of BAW band filters around 5.2 GHz is discussed. The manufacturing is reviewed and the measurement results are discussed. Latest results from manufactured BAW resonators are shown a sufficient performance in order to fulfill the Wireless-LAN communication requirements. The manufactured single resonators show quality factors Q of up to 900 and a piezoelectric coupling factor k_eff² of 6.5%.

Keywords

Q-factor; acoustic resonator filters; bulk acoustic wave devices; cellular radio; ladder filters; mobile handsets; wireless LAN; 5.2 GHz; GSM mobile handset; Infineon technologies; bulk acoustic wave band filters; bulk acoustic wave resonators; global systems for mobile communications; local area networks; piezoelectric coupling factor; quality factors; thin film bulk acoustic wave devices; volume manufacturing; wirelessLAN communication; Acoustic measurements; Acoustic waves; Bulk acoustic wave devices; GSM; Manufacturing; Mobile communication; Mobile handsets; Q factor; Resonator filters; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics, 2003 IEEE Symposium on

Print_ISBN

0-7803-7922-5

Type

conf

DOI

10.1109/ULTSYM.2003.1293382

Filename

1293382