Title :
Thin film bulk acoustic wave devices for applications at 5.2 GHz
Author :
Fattinger, G.G. ; Kaitila, J. ; Aigner, R. ; Nessler, W.
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
Infineon Technologies has started volume manufacturing of bulk acoustic wave (BAW) filters for GSM mobile handset applications in mid 2002. In this paper the feasibility of BAW band filters around 5.2 GHz is discussed. The manufacturing is reviewed and the measurement results are discussed. Latest results from manufactured BAW resonators are shown a sufficient performance in order to fulfill the Wireless-LAN communication requirements. The manufactured single resonators show quality factors Q of up to 900 and a piezoelectric coupling factor keff2 of 6.5%.
Keywords :
Q-factor; acoustic resonator filters; bulk acoustic wave devices; cellular radio; ladder filters; mobile handsets; wireless LAN; 5.2 GHz; GSM mobile handset; Infineon technologies; bulk acoustic wave band filters; bulk acoustic wave resonators; global systems for mobile communications; local area networks; piezoelectric coupling factor; quality factors; thin film bulk acoustic wave devices; volume manufacturing; wirelessLAN communication; Acoustic measurements; Acoustic waves; Bulk acoustic wave devices; GSM; Manufacturing; Mobile communication; Mobile handsets; Q factor; Resonator filters; Thin film devices;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293382
