Title :
Dynamic analysis of CMUTs in different regimes of operation
Author :
Bayram, Baris ; Hæggström, Edward ; Ergun, Arif Sanli ; Yaralioglu, Goksen G. ; Khuri-Yakub, Butrus T.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
This paper reports on dynamic analysis of an immersed single capacitive micromachined ultrasonic transducer (CMUT) cell transmitting. A water loaded 24 μm circular silicon membrane of a transducer was modeled. The calculated collapse and snapback voltages were 80 V and 50 V, respectively. The resonance frequency, output pressure and nonlinearity of the CMUT in three regimes of operation were determined. These regimes were: a) the conventional regime in which the membrane does not make contact with the substrate, b) the collapsed regime in which the center of the membrane is in constant contact with the substrate, and c) the collapse-snapback regime in which the membrane intermittently makes contact with the substrate and releases. The average membrane displacement was compared as the CMUT was operated in these regimes. A displacement of 70 Å in the collapsed regime and 39 Å in conventional regime operation were predicted when a 5 V pulse was applied to the CMUT cell biased at 70 V. The CMUT showed a 2nd harmonic at -16 dB and -26 dB in conventional and collapsed regimes of operation, respectively. Collapse-snapback operation provided increased output pressure at the expense of a 3rd harmonic at -10 dB. Our simulations predicted that the average output pressure at the membrane could be 90 kPa/V with collapse-snapback operation compared to 4 kPa/V with conventional operation.
Keywords :
capacitive sensors; elemental semiconductors; finite element analysis; micromechanical devices; silicon; ultrasonic transducers; 5 V; 50 V; 70 V; 80 V; Si; capacitive micromachined ultrasonic transducer; circular silicon membrane; collapse snapback regime; finite element analysis; membrane displacement; resonance frequency; snapback voltage; third harmonics; Biomembranes; Electrodes; Finite element methods; Insulation; Laboratories; Resonance; Resonant frequency; Silicon; Ultrasonic transducers; Voltage;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293449