Title :
Proposal of an Ultracompact CMOS-Compatible TE-/TM-Pass Polarizer Based on SoI Platform
Author :
Azzam, Shaimaa I. H. ; Hameed, Mohamed Farhat O. ; Areed, Nihal F. F. ; Abd-Elrazzak, Maher M. ; El-Mikaty, H.A. ; Obayya, Salah S. A.
Author_Institution :
Dept. of Commun. & Electron., Mansoura Univ., Mansoura, Egypt
Abstract :
An all-dielectric transverse electric (TE)-/transverse magnetic (TM)-pass polarizer based on silicon-on-insulator (SoI) is proposed and analyzed. The symmetric etching of the silicon nanowire with specific values allows the cutoff of the undesired polarization state while the other is propagated with minimal losses. The proposed SoI polarizer can achieve 26- and 30-dB extinction ratios and 0.4-dB insertion losses for both TE- and TM-pass polarizers, respectively, with a very compact device length as short as 2.5 μm. The polarizer maintains <;1-dB insertion loss and >20-dB extinction ratio over a wide wavelength range of 1.454-1.68 μm. Fabrication of the introduced device is compatible with standard CMOS fabrication process.
Keywords :
CMOS integrated circuits; etching; extinction coefficients; integrated optics; nanophotonics; nanowires; optical fabrication; optical losses; optical polarisers; silicon; silicon-on-insulator; Si; SoI polarizer; TE-pass polarizer; all-dielectric transverse electric-/transverse magnetic-pass polarizer; compact device length; cutoff; device fabrication; extinction ratios; insertion losses; loss 0.4 dB; polarization state; silicon nanowire; silicon-on-insulator; size 2.5 mum; standard CMOS fabrication process; symmetric etching; ultracompact CMOS-compatible TE-/TM-pass polarizer; wavelength 1.454 mum to 1.68 mum; wide wavelength range; Erbium; Etching; Extinction ratio; Insertion loss; Optical waveguides; Silicon; Time-domain analysis; CMOS compatible; Polarizer; photonic integrated circuits (PICs); silicon wire; silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2329416
