• DocumentCode
    41077
  • Title

    Proposal of an Ultracompact CMOS-Compatible TE-/TM-Pass Polarizer Based on SoI Platform

  • Author

    Azzam, Shaimaa I. H. ; Hameed, Mohamed Farhat O. ; Areed, Nihal F. F. ; Abd-Elrazzak, Maher M. ; El-Mikaty, H.A. ; Obayya, Salah S. A.

  • Author_Institution
    Dept. of Commun. & Electron., Mansoura Univ., Mansoura, Egypt
  • Volume
    26
  • Issue
    16
  • fYear
    2014
  • fDate
    Aug.15, 15 2014
  • Firstpage
    1633
  • Lastpage
    1636
  • Abstract
    An all-dielectric transverse electric (TE)-/transverse magnetic (TM)-pass polarizer based on silicon-on-insulator (SoI) is proposed and analyzed. The symmetric etching of the silicon nanowire with specific values allows the cutoff of the undesired polarization state while the other is propagated with minimal losses. The proposed SoI polarizer can achieve 26- and 30-dB extinction ratios and 0.4-dB insertion losses for both TE- and TM-pass polarizers, respectively, with a very compact device length as short as 2.5 μm. The polarizer maintains <;1-dB insertion loss and >20-dB extinction ratio over a wide wavelength range of 1.454-1.68 μm. Fabrication of the introduced device is compatible with standard CMOS fabrication process.
  • Keywords
    CMOS integrated circuits; etching; extinction coefficients; integrated optics; nanophotonics; nanowires; optical fabrication; optical losses; optical polarisers; silicon; silicon-on-insulator; Si; SoI polarizer; TE-pass polarizer; all-dielectric transverse electric-/transverse magnetic-pass polarizer; compact device length; cutoff; device fabrication; extinction ratios; insertion losses; loss 0.4 dB; polarization state; silicon nanowire; silicon-on-insulator; size 2.5 mum; standard CMOS fabrication process; symmetric etching; ultracompact CMOS-compatible TE-/TM-pass polarizer; wavelength 1.454 mum to 1.68 mum; wide wavelength range; Erbium; Etching; Extinction ratio; Insertion loss; Optical waveguides; Silicon; Time-domain analysis; CMOS compatible; Polarizer; photonic integrated circuits (PICs); silicon wire; silicon-on-insulator (SOI);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2014.2329416
  • Filename
    6827196