DocumentCode
411395
Title
IPEM based high frequency PFC
Author
Lu, Bing ; Lu, Zhiguo ; Yang, Liyu ; Dong, Wei ; Lee, F.C. ; Liang, Zhengxian ; van Wyk, J.D. ; Chen, Zhou ; Boroyevich, D.
Author_Institution
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
2
fYear
2004
fDate
2004
Firstpage
1200
Abstract
For the high frequency power factor correction applications, the parasitic on the circuit begins to be the bottle net for the circuit performance. In this paper, the parasitic effects on the power factor correction circuit are analyzed. To minimize the circuit parasitic, IPEM concept is used. Based on the newly developed PFC IPEM, experimental results show the benefits both from converter efficiency improvement and device voltage stress reduction.
Keywords
power convertors; power factor correction; IPEM concept; circuit performance; converter efficiency; high frequency PFC; integrated power electronics module; parasitic effects; power factor correction circuit; voltage stress reduction; MOSFET circuits; Power factor correction; Power system harmonics; Schottky diodes; Silicon carbide; Stress; Switches; Switching frequency; Switching loss; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 2004. APEC '04. Nineteenth Annual IEEE
Print_ISBN
0-7803-8269-2
Type
conf
DOI
10.1109/APEC.2004.1295975
Filename
1295975
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