DocumentCode
411626
Title
Terahertz carrier dynamics and dielectric response of n-type GaN
Author
Azad, Abul K. ; Zhang, W. ; Grischkowsky, D.
Author_Institution
Sch. of Electr. & Comput. Eng., Oklahoma State Univ., Stillwater, OK, USA
fYear
2003
fDate
6-6 June 2003
Abstract
We report the first characterization of the complex conductivity and absorption of an n-type GaN freestanding crystal by terahertz time-domain spectroscopy (THz-TDS) over the frequency range from 0.1 to 4 THz. The measured conductivity was well fit by Drude theory.
Keywords
III-V semiconductors; gallium compounds; high-speed optical techniques; optical conductivity; wide band gap semiconductors; 0.1 to 4 THz; Drude theory; GaN; THz-TDS; complex conductivity; conductivity measurement; n-type GaN; n-type GaN freestanding crystal absorption; terahertz carrier dynamics; terahertz dielectric response; terahertz time-domain spectroscopy; Absorption; Conductivity; Dielectrics; Frequency; Gallium nitride; Optical materials; Optical transmitters; Power measurement; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1297705
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