Current status on GaN-based light emitting devices

Author

Iwayama, S. ; Kato, H. ; Yamasaki, S. ; Tezen, Y. ; Minoura, J. ; Nagai, S. ; Asai, M. ; Watanabe, H. ; Kojima, A. ; Arazoe, N. ; Nakamura, R. ; Hatano, T. ; Koike, M. ; Tomita, K. ; Kachi, T.

Author_Institution

Toyota Central R&D Laboratories, Inc.,

fYear

2003

fDate

6-6 June 2003

Firstpage

351

Lastpage

353

Keywords

Bonding; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium nitride; Leg; Mirrors; Semiconductor lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-748-2

Type

Filename

1297842

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