DocumentCode :
411822
Title :
Optical nonlinearities of opposite sign from intersubband transitions in GaN quantum wells
Author :
Chen, Gang ; Rapaport, Ronen ; Mitrofanov, Oleg ; Gmachl, Claire ; Ng, Hock M.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
fYear :
2003
fDate :
6-6 June 2003
Abstract :
We show experimentally that the optical nonlinearities due to intersubband transitions in GaN quantum wells can have both signs, depending on the structure of choice. Nonlinear transmission measurements show strong, ultrafast induced absorption that may be used in future nonlinear optical devices.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; nonlinear optics; optical variables measurement; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN quantum wells; intersubband transitions; nonlinear optical devices; nonlinear transmission measurements; ultrafast induced absorption; Absorption; Gallium nitride; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical pumping; Optical scattering; Optical superlattices; Probes; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
Type :
conf
Filename :
1297968
Link To Document :
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