DocumentCode
411875
Title
Nonlinear reflectance and transmittance of semiconductor periodic structures between 1.3 and 1.6 /spl mu/m
Author
Brzozowski, Lukasz ; Sukhovatkin, Vladimir ; Sargent, Edward E. ; Thorpe, A.S. ; Extavour, Marcius
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fYear
2003
fDate
6-6 June 2003
Abstract
The nonlinear response of a periodically nonlinear InGaAs/InAlGaAs optical element is reported from 1.3 /spl mu/m to 1.6 /spl mu/m. Near 1.5 /spl mu/m the structure is optically homogeneous at low intensities, while with increased incident power a Bragg grating appears.
Keywords
Bragg gratings; III-V semiconductors; gallium arsenide; indium compounds; light transmission; nonlinear optics; optical multilayers; periodic structures; reflectivity; semiconductor quantum wells; 1.3 to 1.6 micron; Bragg grating; InGaAs-InAlGaAs; multiple quantum well; nonlinear reflectance; nonlinear transmittance; optical multilayers; optically homogeneous; periodically nonlinear InGaAs-InAlGaAs optical element; semiconductor periodic structures; Absorption; Bragg gratings; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical scattering; Optical signal processing; Periodic structures; Quantum well devices; Reflectivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298022
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