DocumentCode
411884
Title
Monolithic integration of dual layer optics on broad area semiconductor lasers
Author
Vaissié, Laurent ; Mohammed, Waleed ; Johnson, E.G.
Author_Institution
Sch. of Opt., Central Florida Univ., Orlando, FL, USA
fYear
2003
fDate
6-6 June 2003
Abstract
A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275 nm period diffraction grating and multilevel refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers.
Keywords
diffraction gratings; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser beams; lenses; optical fabrication; semiconductor lasers; 275 nm; InGaAs; beam shaping; broad area InGaAs semiconductor laser diode; dual layer optics; high power amplifiers; high power lasers; monolithically integrated optical elements; multilevel refractive lens; period diffraction grating; Diode lasers; Indium gallium arsenide; Integrated optics; Monolithic integrated circuits; Optical beams; Optical diffraction; Optical refraction; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298031
Link To Document