DocumentCode
411888
Title
760 nm vertical cavity surface emitting lasers for gas sensing
Author
Young, E.W. ; Kim, Y.K. ; Choquette, K.D. ; Leinonen, P. ; Leinonen, T. ; Viheriälä, J. ; Pessa, M.
Author_Institution
Illinois Univ., Champaign, IL, USA
fYear
2003
fDate
6-6 June 2003
Abstract
Lasing was observed for the first time for 766 nm vertical cavity surface emitting lasers with strained AlGaInAs/AlGaAs quantum wells. The selectively oxidized structure was grown by solid source molecular beam epitaxy and the lasers operated under pulsed excitation.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gas sensors; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor quantum wells; surface emitting lasers; 760 nm; 766 nm; AlGaInAs-AlGaAs; gas sensing; oxidized structure; pulsed excitation; quantum wells; solid source molecular beam epitaxy; vertical cavity surface emitting lasers; Apertures; Distributed Bragg reflectors; Etching; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Optical surface waves; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298035
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