Longitudinal current modulated light reflectance spectroscopy of semiconductor laser heterostructures

Author

Ryabushkin, O.A. ; Romanyuk, A.Y. ; Chernikov, M.A. ; Sotnikov, A.E. ; Trubenko, P. ; Moshegov, N. ; Ovtchinnikov, A.

Author_Institution

Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia

fYear

2003

fDate

6-6 June 2003

Abstract

In this work we introduce new effective method of modulation spectroscopy for investigation of high power semiconductor laser heterostructures and compare it with traditional photoreflectance and photoluminescence methods. We present experimental results for AlGaAs/GaAs semiconductor laser heterostructure with strained InGaAs quantum well grown on n/sup +/-GaAs substrate.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; modulation spectroscopy; optical modulation; photoluminescence; photoreflectance; quantum well lasers; semiconductor quantum wells; AlGaAs-GaAs; GaAs; GaAs substrate; InGaAs; light reflectance modulation spectroscopy; longitudinal current; photoluminescence methods; photoreflectance methods; quantum well; semiconductor laser heterostructures; Gallium arsenide; Indium gallium arsenide; Optical modulation; Photoluminescence; Power lasers; Quantum well lasers; Reflectivity; Semiconductor lasers; Spectroscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2003. CLEO '03. Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-748-2

Type

conf

Filename

1298038