DocumentCode
412427
Title
Pulsed laser deposition with the Thomas Jefferson national accelerator facility free electron laser: benefits of sub-picosecond pulses with high repetition rate
Author
Reilly, A. ; Allmond, C. ; Watson, S. ; Gammon, J. ; Kim, J.-G. ; Shinn, M.
Author_Institution
Dept. of Phys., Coll. of William & Mary, Williamsburg, VA, USA
fYear
2003
fDate
6-6 June 2003
Abstract
The TJNAF-FEL presents unique opportunities for the study of pulsed laser deposition due to its parameters: sub-picosecond pulses, high average power, high repetition rate and tunability. This is demonstrated through optical spectroscopy and growth of thin films.
Keywords
free electron lasers; high-speed optical techniques; optical films; pulsed laser deposition; visible spectroscopy; Thomas Jefferson national accelerator facility free electron laser; high average power; high repetition rate; optical spectroscopy; pulsed laser deposition; sub-picosecond pulse; thin film growth; tunability; Electron accelerators; Free electron lasers; Laser ablation; Optical films; Optical pulses; Pulse amplifiers; Pulsed laser deposition; Sputtering; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-748-2
Type
conf
Filename
1298578
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