Title :
High conversion efficiency limited laser plasma source for EUV lithography
Author :
Keyser, C. ; Koay, C.-S. ; Takenoshita, K. ; Richardson, M. ; Al-Rabban, M. ; Turcu, E.
Author_Institution :
Sch. of Opt., Central Florida Univ., Orlando, FL, USA
Abstract :
EUV lithography requires a high-efficiency light source at 13 nm that is free from debris. Our mass-limited tin material laser plasma source provides the highest conversion of laser-light to useful in-band EUV emission.
Keywords :
light sources; luminescence; plasma applications; plasma sources; tin; ultraviolet lithography; 13 nm; EUV emission; EUV lithography; Sn; conversion efficiency; laser plasma source; light source; tin material; Laser modes; Laser stability; Laser theory; Lithography; Optical materials; Physics; Plasma sources; Power lasers; Tin; Ultraviolet sources;
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO '03. Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-748-2
