Title :
Optical absorption enhancement in nano/micro textured thin film solar cells
Author :
Dmitruk, N.L. ; Korovin, A.V. ; Borkovskaya, O.Yu. ; Mamontova, I.B. ; Maronchuk, I.E.
Author_Institution :
Inst. for Phys. of Semicond., Nat. Acad of Sci. of Ukraine, Kiev, Ukraine
Abstract :
The new theoretical approach for calculations of monochromatic light transmission through a thin absorbing film with one or two slightly rough interfaces has been elaborated. The theoretical calculations were based on electro-dynamical equations for normal incidence of light, where the roughness was considered as perturbation to dielectric permittivity and assumed to be statistically homogeneous and described by Gaussian correlation function. The spectra of the transmittance of thin metal (Au, Ag, Al) continuous films with rough or flat interfaces with air and semiconductor GaAs at normal incidence of light have been calculated. Both numerical and analytical considerations demonstrate an increase of transmission coefficient by about ten percent and agree with experimental data, obtained on solar cells with nearly flat (nano-textured) and microtextured by anisotropic etching GaAs surface.
Keywords :
III-V semiconductors; aluminium; electron-hole recombination; gallium arsenide; gold; interface roughness; metallic thin films; nanostructured materials; photoconductivity; rough surfaces; semiconductor-metal boundaries; silver; solar cells; surface morphology; visible spectra; Ag-GaAs; Al-GaAs; Au-GaAs; Gaussian correlation function; anisotropic etching GaAs surface; dielectric permittivity; electro-dynamical equation; flat interfaces; microtextured thin film solar cells; monochromatic light transmission; nanotextured thin film solar cells; optical absorption; rough interfaces; statistical homogeneity; thin absorbing film; thin metal continuous films; transmittance spectra;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3