Improved quantum efficiency of solar cells with Ge dots stacked in multilayer structure

Author

Alguno, A. ; Usami, N. ; Ujihara, T. ; Fujiwara, K. ; Sawano, K. ; Sazaki, G. ; Shiraki, Y. ; Nakajima, K.

Author_Institution

Inst. for Mater. Res., Tohoku Univ., Sendai, Japan

Volume

3

fYear

2003

fDate

18-18 May 2003

Firstpage

2746

Abstract

We report on the improved external quantum efficiency of solar cells in the infrared region with self-assembled Ge dots stacked in multilayer structure embedded within the intrinsic region of a p-i-n diode. This quantum efficiency was found to increase with increasing number of stacking. This indicates that additional photocarriers are generated in the Ge dots and have a high probability of escaping from the dots and/or at Ge/Si interfaces without significant recombination under the influence of the internal electric field.

Keywords

elemental semiconductors; germanium; multilayers; p-i-n diodes; photoluminescence; self-assembly; semiconductor quantum dots; silicon; solar cells; spectral line shift; thermal diffusion; Ge dots stacking; Ge-Si; Ge/Si interfaces; external quantum efficiency; infrared region; internal electric field influence; multilayer structure; p-i-n diode; photocarriers; photocarriers generation; self-assembly; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305159