• DocumentCode
    413468
  • Title

    Optimization of CuGaSe/sub 2/ for wide-bandgap solar cells

  • Author

    Contreras, Miguel A. ; Romero, M. ; Young, D.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • Volume
    3
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    2864
  • Abstract
    We report on enhancements to CuGaSe/sub 2/ film quality and their application to photovoltaic devices with high-voltage and low-current outputs. Using co-evaporation from elemental sources for film growth, we study deposition parameters such as substrate temperature and selenium overpressure to investigate their effect on film quality and device performance. Similar to CuInSe/sub 2/ materials, high Se overpressures change structural aspects of the CuGaSe/sub 2/ films, particularly those related to preferred orientation. Additionally, the use of higher substrate temperatures (>600/spl deg/C), also leads to significant changes on film morphology, optoelectronic properties, and device performance.
  • Keywords
    copper compounds; gallium compounds; photovoltaic effects; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; texture; vacuum deposition; CuGaSe/sub 2/; CuGaSe/sub 2/ film quality; coevaporation; deposition parameter; film morphology; optoelectronic properties; photovoltaic device; preferred orientation; selenium overpressure; substrate temperature; thin film growth; wide band gap solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305181