DocumentCode
413468
Title
Optimization of CuGaSe/sub 2/ for wide-bandgap solar cells
Author
Contreras, Miguel A. ; Romero, M. ; Young, D.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
Volume
3
fYear
2003
fDate
18-18 May 2003
Firstpage
2864
Abstract
We report on enhancements to CuGaSe/sub 2/ film quality and their application to photovoltaic devices with high-voltage and low-current outputs. Using co-evaporation from elemental sources for film growth, we study deposition parameters such as substrate temperature and selenium overpressure to investigate their effect on film quality and device performance. Similar to CuInSe/sub 2/ materials, high Se overpressures change structural aspects of the CuGaSe/sub 2/ films, particularly those related to preferred orientation. Additionally, the use of higher substrate temperatures (>600/spl deg/C), also leads to significant changes on film morphology, optoelectronic properties, and device performance.
Keywords
copper compounds; gallium compounds; photovoltaic effects; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; texture; vacuum deposition; CuGaSe/sub 2/; CuGaSe/sub 2/ film quality; coevaporation; deposition parameter; film morphology; optoelectronic properties; photovoltaic device; preferred orientation; selenium overpressure; substrate temperature; thin film growth; wide band gap solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305181
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