DocumentCode
413492
Title
Interconnect junctions for thin-film tandem solar cells
Author
Young, David L. ; Contreras, Miguel ; Romero, Manuel ; Asher, Sally ; Perkins, Craig ; Gessert, Timothy ; Keane, James ; Coutts, Timothy J. ; Noufi, Rommel
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
27
Abstract
Polycrystalline thin-film, tandem solar cells promise high efficiencies and high open-circuit voltages. Along with the high-bandgap top cell, a thin-film interconnect junction is one of the more demanding components of a monolithic tandem. We will present electrical, optical, structural, and device-compatibility results from several interconnect junctions grown on Cu(In,Ga)Se/sub 2/, CdTe, and Si absorber layers. The physics of an interconnect junction will be discussed as a guide for choosing appropriate materials. Although emphasis will be placed on several promising transparent p-type materials, results from degenerate n-type materials will also be discussed. Results of an n/sup +//p/sup +/ interconnect junction in a monolithic tandem will be presented.
Keywords
II-VI semiconductors; cadmium compounds; copper compounds; elemental semiconductors; gallium compounds; indium compounds; integrated circuit interconnections; semiconductor thin films; silicon; solar cells; ternary semiconductors; CdTe; Cu(InGa)Se/sub 2/; Interconnect junctions; Si; high-bandgap top cell; monolithic tandem; open-circuit voltages; polycrystalline thin-film; thin-film tandem solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305211
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