• DocumentCode
    413492
  • Title

    Interconnect junctions for thin-film tandem solar cells

  • Author

    Young, David L. ; Contreras, Miguel ; Romero, Manuel ; Asher, Sally ; Perkins, Craig ; Gessert, Timothy ; Keane, James ; Coutts, Timothy J. ; Noufi, Rommel

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    27
  • Abstract
    Polycrystalline thin-film, tandem solar cells promise high efficiencies and high open-circuit voltages. Along with the high-bandgap top cell, a thin-film interconnect junction is one of the more demanding components of a monolithic tandem. We will present electrical, optical, structural, and device-compatibility results from several interconnect junctions grown on Cu(In,Ga)Se/sub 2/, CdTe, and Si absorber layers. The physics of an interconnect junction will be discussed as a guide for choosing appropriate materials. Although emphasis will be placed on several promising transparent p-type materials, results from degenerate n-type materials will also be discussed. Results of an n/sup +//p/sup +/ interconnect junction in a monolithic tandem will be presented.
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; elemental semiconductors; gallium compounds; indium compounds; integrated circuit interconnections; semiconductor thin films; silicon; solar cells; ternary semiconductors; CdTe; Cu(InGa)Se/sub 2/; Interconnect junctions; Si; high-bandgap top cell; monolithic tandem; open-circuit voltages; polycrystalline thin-film; thin-film tandem solar cells;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305211