DocumentCode
413512
Title
Direct observations of crystal growth from silicon melt
Author
Fujiwara, Kozo ; Nakajima, Keiji ; Ujihara, Toru ; Usami, Noritaka ; Sazaki, Gen ; Hasegawa, Hajime ; Mizoguchi, Shozo ; Nakajima, Kazuo
Author_Institution
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
110
Abstract
Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown that the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.
Keywords
crystal growth from melt; crystal morphology; elemental semiconductors; nucleation; optical microscopy; semiconductor growth; silicon; undercooling; Si; confocal scanning laser microscopy; crystal growth; facet morphology; growth interface; infrared camera; infrared image furnace; planar morphology; silicon melt; two-dimensional nucleation model; undercooling;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305232
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