Direct observations of crystal growth from silicon melt

Crystal growth behavior from silicon melt was observed using a confocal scanning laser microscope with an infrared image furnace. The morphology of growth interface changed from planar to facet with increasing growth rate. The facet vanishing process was also observed. It was shown that the (111) facet formed at a steady state. The undercooling in front of the facet interface was measured by an infrared camera and found to be almost 7 degrees. The growth behavior from silicon melt was explained by the analytical expression based on two-dimensional nucleation model.