Title :
A novel /spl beta/-FeSi/sub 2/ thin film solar cell fabricated by sputtering
Author :
Liu, Zhengxin ; Wang, Shinan ; Otogawa, Naotaka ; Osamura, Masato ; Ootsuka, Teruhisa ; Mise, Takahiro ; Suzuki, Yasuhito ; Fukuzawa, Yasuhiro ; Nakayama, Yasuhiko ; Tanoue, Hisao ; Makita, Yunosuke
Author_Institution :
Nat. Inst. of Adv. Industrial Sci. & Technol., Tsukuba, Japan
Abstract :
A novel n-/spl beta/-FeSi/sub 2//p-Si hetero-junction thin film solar cell was fabricated by sputtering. Under air mass (AM) 1.5, 100-mW/cm/sup 2/ illumination, an energy conversion efficiency of 3.7% with open-circuit voltage 0.45 V, short-circuit current density 14.8 mA/cm/sup 2/ and fill factor 0.55 was obtained. The critical feature about the cell structure is an optimized thin /spl beta/-FeSi/sub 2/ template buffer layer on Si(111) substrate deposited at low temperature. This template with good crystallinity serves as a substrate for epitaxial growth of single crystal /spl beta/-FeSi/sub 2/ film by sputtering method and restrains the Fe diffusion into Si at /spl beta/-FeSi/sub 2//Si interface.
Keywords :
chemical interdiffusion; elemental semiconductors; iron compounds; p-n heterojunctions; semiconductor epitaxial layers; short-circuit currents; silicon; solar cells; sputter deposition; /spl beta/-FeSi/sub 2//Si interface.; 3.7 percent; FeSi/sub 2/-Si; buffer layer; cell structure; crystallinity; diffusion; energy conversion efficiency; epitaxial growth; fill factor; n-/spl beta/-FeSi/sub 2//p-Si hetero-junction thin film solar cell; open-circuit voltage; short-circuit current density; sputtering;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
