Effect of variation of indium on structural and optical properties of indium sulfide thin films

Author

John, Teny Theresa ; VijayaKumar, K.P. ; Kartha, Sudha C. ; Kashiwaba, Y. ; Abe, T.

Author_Institution

Dept. of Phys., Cochin Univ. of Sci. & Technol., Kochi, Japan

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

155

Abstract

Attention has recently been paid to In/sub 2/S/sub 3/ thin films because of their potential application as buffer layer in CIGS based solar cells. Indium sulfide thin films were prepared using chemical spray pyrolysis (CSP) Technique and were characterized using XRD, XPS, photosensitivity measurements and optical absorption studies. XRD studies revealed that the samples were /spl beta/-In/sub 2/S/sub 3/. Variation in photosensitivity was studied by varying indium concentration in the solution keeping sulfur concentration at 3, 6 and 8 as In/S ratio has got great influence on photosensitivity. The sample having In/S ratio 1.2/8 showed maximum photosensitivity.

Keywords

III-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; indium compounds; infrared spectra; photochemistry; pyrolysis; semiconductor thin films; solar cells; CIGS based solar cell; In/S ratio; In/sub 2/S/sub 3/; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; buffer layer; chemical spray pyrolysis; indium concentration; optical absorption; optical properties; photosensitivity; structural properties; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305244