The effect of doping on the physical properties of zinc oxide films prepared by spray pyrolysis

The structural, optical and electrical properties of ZnO:ln thin films prepared by spray pyrolysis method are examined. The used spray solution (0.2 M) was prepared by adding indium chloride InCl/sub 3/ to the precursor of zinc acetate dissolved in mixed solution 80% H/sub 2/O: 20%CH/sub 3/OH. The XRD patterns for incorporated ZnO film with different concentration of indium shows three additional peaks (100), (101) and [110] over the only one [002] appeared in pure ZnO. The intensities of these peaks are increased gradually with indium concentration while the [002] peak decrease to its minimum value as 3% In. The resistivity of ZnO films was improved by doping from 2.25 /spl times/ 10/sup 2/ /spl Omega/.cm for undoped to the minimum value at 2% doping concentration 2.6 /spl times/ 10/sup -2/ /spl Omega/.cm. The optical bandgap of all films has no change by In addition and shows sharp absorption edge at 380 nm.