Characteristics of n-C:P/p-Si heterojunction solar cells

This paper reports on the successful deposition of phosphorous (P)-doped n-type (n-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by using pulsed laser deposition (PLD) technique at room temperature, using graphite target. The P atoms incorporated in the films were determined by X-ray photoelectron spectroscopy (XPS) to be in the range of 0.22 - 1.77 atomic percentages. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm/sup 2/, 25/spl deg/C). The open circuit voltage (V/sub oc/) and short circuit current density (J/sub sc/) for the cells are observed to vary from 215 to 265 mV and from 7.5 to 10.5 mA/cm/sup 2/, respectively. The cell fabricated using the target with the amount of P by 7 weight percentages (Pwt%) shows highest energy conversion efficiency, /spl eta/ = 1.14% and fill factor, FF = 41%. The dependence of the P content on the electrical and optical properties of the deposited films and the photovoltaic characteristic of the cells are discussed.