Title :
Low-bandgap (0.3 to 0.5 eV) InAsSbP thermophotovoltaics: assessment for open-circuit voltage improvements
Author :
Mauk, Michaelg ; Sulima, Oleg V. ; Cox, Jeffreya ; Mueller, Robert L.
Author_Institution :
AstroPower Inc., Newark, DE, USA
Abstract :
The spectral response of thermophotovoltaic cells can be considerably extended (compared to that of most current TPV technologies) with devices made in the InAsSbP alloy system. InAsSbP TPV cells demonstrate good quantum efficiencies out to wavelengths of 3500 nm, but the open-circuit voltages are relatively low. We discuss the possible limitations and prospects for improving the open-circuit voltages of InAsSbP TPV cells.
Keywords :
III-V semiconductors; antimony compounds; arsenic compounds; indium compounds; thermophotovoltaic cells; 3500 nm; InAsSbP; open-circuit voltage; quantum efficiency; spectral response; thermophotovoltaic cell;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
