p inversion layer Si solar cells as test for the I/sup -/S structure: results and prospects

The I/sup -/S structure is a novel layer arrangement serving as a source for a negative drift field. Its application to solar cells is manifold and does not depend on Si. The deposition of the Aluminium Fluoride (AlF/sub 3/) layer involved can be implemented as final process in solar cell production; thus compatibility to existing processing sequences is given. First prototypes of a p inversion layer solar cell on Si were prepared providing evidence of function for the I/sup -/S structure. While conditions of preparation were far from optimum, a relative increase in conversion efficiency of 21% was achieved for solar cells with I/sup -/S structure versa solar cells without it. For testing the field effect impact the AlF/sub 3/ layer thickness was chosen to be 15 nm thus eliminating its additional advantage as anti-reflective coating (ARC).