Title :
Amorphous carbon solar cell deposited by pulsed laser deposition
Author :
Tian, Xuemin ; Mishra, Dilip Kumar ; Soga, T. ; Jimbo, Takashi ; Umeno, Masayoshi
Author_Institution :
Dept. of Environemental Technol. & Urban Planning, Nagoya Inst. of Technol., Japan
Abstract :
Hydrogenated amorphous carbon films (a-C:H) were deposited on p-type silicon substrates by pulsed laser deposition (PLD) technique using a mixture of graphite and camphor powders. The Fourier Transform Infrared Spectroscopy (FTIR) measurement revealed the presence of hydrogen in the a-C:H films. The formation of a heterojunction between the a-C:H film and silicon substrate was confirmed by the current-voltage (I-V) measurement. The structure of a-C:H/p-Si showed photovoltaic characteristics with an open-circuit voltage (V/sub oc/) of 0.4 V and short-circuit current density (J/sub sc/) of about 15 mA/cm/sup 2/ under illumination (AM 1.5, 100 mW/cm/sup 2/). From the calculation, the energy conversion efficiency and fill factor were found to be 2.1% and 0.38, respectively. The carbon layer contributed to the energy conversion efficiency, which was proved by the measurement of quantum efficiency.
Keywords :
Fourier transform spectra; amorphous semiconductors; carbon; elemental semiconductors; hydrogenation; p-n heterojunctions; photovoltaic effects; pulsed laser deposition; short-circuit currents; silicon; solar cells; 0.4 V; 2.1 percent; Fourier transform infrared spectroscopy; Si-C:H; camphor powder; current-voltage measurement; energy conversion efficiency; fill factor; graphite; heterojunction; hydrogenated amorphous carbon film; open-circuit voltage; p-type silicon substrate; photovoltaic characteristics; pulsed laser deposition; quantum efficiency; short-circuit current density;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
