DocumentCode
413562
Title
Thermodynamic modeling of F doping of SnO/sub 2/
Author
Kerr, L.L. ; Anderson, Travis J. ; Crisalle, Oscar D. ; Li, Sinan
Author_Institution
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
303
Abstract
Control of fluorine doping levels in tin oxide (FTO) is important for optimizing the electrical and optical properties of this TCO. In this work, a model was developed to estimate the equilibrium F solubility in FTO as a function of temperature and dopant precursor partial pressure. The choice of dopant precursor (CF/sub 4/, CBrF/sub 3/, and ClF/sub 3/) on F incorporation during CVD of FTO is estimated and compared with experimental results.
Keywords
chemical vapour deposition; fluorine; semiconductor doping; semiconductor process modelling; semiconductor thin films; solar cells; solubility; tin compounds; wide band gap semiconductors; CVD; SnO/sub 2/:F; chemical vapor deposition; dopant precursor partial pressure; electrical properties; fluorine doping level; optical properties; solubility; thermodynamic modeling; transparent conductive oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305282
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