DocumentCode :
413599
Title :
The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell
Author :
Romeo, Nicola ; Bosio, Alessio ; Canevari, Vittorio
Author_Institution :
Dipt. di Fisica, Parma Univ., Italy
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
469
Abstract :
A study of CdS films and how they can influence the CdS/CdTe solar cell interface is reported. CdS is prepared by two different methods. The first one is the closed-space-sublimation (CSS) and the second one is sputtering. Both methods, if they are used properly, are suitable to prepare cells with efficiencies larger than 14%. We found out that, in order to obtain high efficiency cells, CdS prepared by CSS has to be made in presence of O/sub 2/, while CdS prepared by sputtering has to be made in presence of fluorine. In both cases the films need to be washed in acetic acid or annealed at 400-420/spl deg/C in an atmosphere containing H/sub 2/. Both treatments seem to be effective in removing an insulating surface layer, which is formed during the CdS preparation. This insulating material could behave as a good passivant for the CdS grain boundaries.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; grain boundaries; interface structure; passivation; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sublimation; 400 to 420 degC; CdS-CdTe; closed-space-sublimation; grain boundaries; insulating surface layer; passivant; preparation method; solar cell interface; sputtering; thin film solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305322
Link To Document :
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