DocumentCode
413605
Title
Numerical modeling of CIGS and CdTe solar cells: setting the baseline
Author
Gloeckler, M. ; Fahrenbruch, A.L. ; Sites, J.R.
Author_Institution
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
491
Abstract
Numerical modeling of polycrystalline thin-film solar cells is an important strategy to test the viability of proposed physical explanations and to predict the effect of physical changes on cell performance. In general, this must be done with only partial knowledge of input parameters. Nevertheless, for consistent comparisons between laboratories, it is extremely useful to have a common starting point, or baseline. We will discuss guidelines that should be considered assigning input parameters for numerical modeling. Consequently specific baseline parameters for CIGS and CdTe are proposed. The modeling results for these baseline cases are presented and it is discussed how the baseline cases serve to describe some of the most important complications that are often found in experimental ClGS and CdTe solar cells.
Keywords
II-VI semiconductors; cadmium compounds; copper compounds; gallium compounds; indium compounds; semiconductor device models; semiconductor thin films; solar cells; ternary semiconductors; CdTe; Cu(InGa)Se/sub 2/; cell performance; input parameter; numerical modeling; polycrystalline thin-film solar cell; specific baseline parameter;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305328
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