DocumentCode :
413610
Title :
Evaluation of CdS nanostructures for application to low environmental-load CdS/CdTe solar cells
Author :
Toyama, T. ; Oda, H. ; Matsune, K. ; Okamoto, H.
Author_Institution :
Dept. of Syst. Innovation, Osaka Univ., Japan
Volume :
1
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
511
Abstract :
The low "environmental-load" CdS/CdTe solar cells for reducing consumption of Cd compounds have been investigated employing the CdS layers fabricated at various substrate temperatures, T/sub CdS/. The nanostructure of CdS crystallites made at different T/sub CdS/ are compared to the crystallinity of CdS, and CdTe deposited on CdS as well as sulfur fraction in CdTe/sub 1-x/S/sub x/ mixed crystal layer unintentionally formed at CdS-CdTe(S) interface. To obtain relative high V/sub oc/, high crystallinity is required for CdS, while to prevent the degradation of CdS/CdTe(S) interface for keeping high FF, rather CdS with low crystallinity is suitable. To break the contradictional requirements for CdS crystallinity, a novel technique is introduced, i.e., (CH/sub 3/)/sub 2/SnCl/sub 2/ (DMTC) doping into CdS. The large sulfur fraction in CdTe/sub 1-x/S/sub x/ mixed crystal layer being a degree of the CdS/CdTe(S) interface is obtained in the solar cell employing the CdS layer doped with DMTC even when the DMTC-doped CdS layer obtains high crystallinity. So far, we have achieved 14.8% efficiency of the low environmental-load CdS/CdTe solar cell.
Keywords :
II-VI semiconductors; cadmium compounds; crystallites; interface structure; nanostructured materials; semiconductor doping; semiconductor thin films; solar cells; 14.8 percent; CdS-CdTe(S) interface; CdS-CdTeS; DMTC doping; crystallinity; crystallites; dimethyltin dichloride; fill factor; low environmental-load solar cell; mixed crystal layer; nanostructure; open-circuit voltage; substrate temperatures; sulfur fraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1305333
Link To Document :
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